Company products quality assurance provisions as follows:
1. Normal use cases (the average daily use of more than 14 hours): 3 years replacement, a 10-year paid maintenance (maintenance cost does not exceed 50% of product price);
2. Special-use cases (an average of 14 hours per day or more): 1 year replacement, 5 years, paid maintenance (maintenance cost does not exceed 50% of product price).

LED chip technology:
LDE's chip architecture design is a very complex system engineering, which covers to improve the injection efficiency and optical efficiency for the purpose of electroluminescent structure design in order to improve the efficiency of learning a ray of light for the purpose of structural design and leads to efficiency and optical density-related electrode design.
With the MOCVD epitaxial growth technology and multi-quantum well structure, development, people in the precise control of epitaxial doping concentration and reduction of dislocations have made a breakthrough at the internal quantum efficiency of the extension piece has been greatly improved. A wavelength of 625nm as the A1InGap base LED, inside the quantum efficiency is close to the limit, up to 100%. A1InGap internal quantum efficiency of LED-based despite the low than the A1InGap-based LED, but up to 40% ~ 50%. You know, LED the external quantum efficiency depends on the extension of the material inside the quantum efficiency and chip out the light efficiency, luminous efficiency of LED Key is to improve the external quantum efficiency of the chip, which is largely a referendum on the chip, light efficiency. To this end HBLED and ultra HBLED to design a new chip architecture to improve the efficiency of the device out of light, thereby improving luminous efficiency. The following pairs of improving luminous efficiency of LED technology and the

Development of ways to make a brief introduction:
Optimization of silicon light-emitting layer energy band structure
With different design, light-emitting layer structure can improve the LED light effect. There is now used by light-emitting layer structure mainly in the following two ways:
First, double-heterostructure (DH). Heterojunction LED compared to homojunction LED, its P region and N zones has a different band gap semiconductor components. In the heterojunction, the wide band-gap materials, known as the barrier layer, narrow-band-gap materials, known as quantum well layer. As shown in Figure 5-10, only one barrier layer and the potential well layer formed a single heterojunction (SH), there are two barrier layer and an active layer (ie, carrier recombination light-emitting layer) is called the knot double heterojunction. The two double-heterostructure barrier layer on the injected carrier to play the role of confinement, namely, by the first results of a heterogeneous surface diffusion into the active layer of the carrier would be the second heterojunction interface Yin block In the active layer, resulting in the current HBLED band structure is usually double-heterostructure.
Second, the quantum well structure. The thin active layer can effectively improve the radiative recombination efficiency and can reduce the re-uptake. However, when the active layer with the thickness of the crystal electron de Broglie wave is comparable to Jin, the carrier will be incurred due to quantum confinement energy spectrum changes. This 咱 special structure known as the quantum well (QW) Figure 5-11 for the quantum well band structure diagram. From this figure we can see that potential well of the carrier band is no longer continuous, but rather to take a series of discrete values. Active layer can be either single-layer, that is a single quantum well (SQW); also for multi-layer, that is multi-quantum well (MQW) structure. Using quantum-well structure active layer can be thinner, resulting in the further pairs of carrier confinement, more conducive to efficiency. Has been found that light with a wavelength of 565nm of A1InGap double heterojunction LED, when the active layer thickness of 0.15 ~ 0.75nm within, the light-efficient; beyond this range, the luminous efficiency is falling sharply, this is because the active layer is too thin, prone to carriers outside the tunnel through to the active layer; if the active layer thick, carrier recombination efficiency will be reduced. Quantum well structure is currently the HBLED widely used one of the energy band structure.